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| 产品描述：
N-Channel 60 V 2 Ohm SMT Enhancement Mode Field Effect Transistor SOT-23
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| 标准包装：1 | ||
| 数据手册： |
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| Operating Temperature | -65°C ~ 150°C (TJ) |
|---|---|
| FET Type | N-Channel |
| Mounting Type | Surface Mount |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain to Source Voltage (Vdss) | 60V |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Manufacturer | ON Semiconductor |
| Part Status | Active |
| Vgs (Max) | ±20V |
| Categories | Discrete Semiconductor Products |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Rds On (Max) @ Id, Vgs | 2 Ohm @ 500mA, 10V |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Power Dissipation (Max) | 300mW (Ta) |
| Technology | MOSFET (Metal Oxide) |
| Packaging | Tape & Reel (TR) |
| Current - Continuous Drain (Id) @ 25°C | 280mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
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