| STW56N60DM2 | ||
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| 产品描述：
TO-247/N-channel 600 V, 0.052 O typ., 50 A MDmesh DM2 Power MOSFET
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
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| Rds On - Drain-Source Resistance: | 60 mOhms |
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| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Vgs - Gate-Source Voltage: | +/- 25 V |
| Unit Weight: | 1.340411 oz |
| Fall Time: | 12 ns |
| Manufacturer: | STMicroelectronics |
| Factory Pack Quantity: | 600 |
| Brand: | STMicroelectronics |
| RoHS: | Details |
| Id - Continuous Drain Current: | 50 A |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| ECCN | EAR99 |
| Qg - Gate Charge: | 90 nC |
| Pd - Power Dissipation: | 360 W |
| Package / Case: | TO-247-3 |
| Configuration: | 1 N-Channel |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 24 ns |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 130 ns |
| Product Category: | MOSFET |
| Rise Time: | 60 ns |
| Maximum Operating Temperature: | + 150 C |
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