| MMBT5551LT3G | ||
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| 产品描述：
MMBT5551 Series NPN 160 V 0.6 A SMT High Voltage Silicon Transistor - SOT-23
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| 标准包装：10000 | ||
| 数据手册： |
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| Collector- Base Voltage VCBO: | 140 V |
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| Collector-Emitter Saturation Voltage: | 0.15 V |
| Minimum Operating Temperature: | - 55 C |
| Package / Case: | SOT-23-3 |
| Configuration: | Single |
| Unit Weight: | 0.050717 oz |
| Maximum DC Collector Current: | 0.6 A |
| Continuous Collector Current: | 0.6 A |
| Manufacturer: | ON Semiconductor |
| Transistor Polarity: | NPN |
| Brand: | ON Semiconductor |
| Product Category: | Bipolar Transistors - BJT |
| Maximum Operating Temperature: | + 150 C |
| Width: | 1.3 mm |
| Packaging: | Reel |
| Pd - Power Dissipation: | 225 mW |
| Height: | 0.94 mm |
| Mounting Style: | SMD/SMT |
| Emitter- Base Voltage VEBO: | 6 V |
| Length: | 2.9 mm |
| DC Collector/Base Gain hfe Min: | 80 |
| Series: | MMBT5551L |
| Factory Pack Quantity: | 10000 |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | 160 V |
| ECCN | EAR99 |
| 数据手册： |
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