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| 产品描述：
NPN 20 W 300 V 500 mA Through Hole Epitaxial Silicon Transistor - TO-126-3
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| 标准包装：60 | ||
| 数据手册： |
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| DC Current Gain hFE Max: | 240 |
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| Emitter- Base Voltage VEBO: | 5 V |
| Packaging: | Bulk |
| Length: | 8 mm |
| Manufacturer: | Fairchild Semiconductor |
| Minimum Operating Temperature: | - 65 C |
| Factory Pack Quantity: | 1920 |
| RoHS: | Details |
| Product Category: | Bipolar Transistors - BJT |
| Height: | 11 mm |
| Unit Weight: | 0.026843 oz |
| Maximum Operating Temperature: | + 150 C |
| Maximum DC Collector Current: | 0.5 A |
| Width: | 3.25 mm |
| Collector- Base Voltage VCBO: | 300 V |
| DC Collector/Base Gain hfe Min: | 30 |
| Pd - Power Dissipation: | 20 W |
| Transistor Polarity: | NPN |
| Brand: | Fairchild Semiconductor |
| Package / Case: | TO-126 |
| Collector- Emitter Voltage VCEO Max: | 300 V |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| ECCN | EAR99 |
| 数据手册： |
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