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| 产品描述：
ON Semiconductor NGTB45N60S2WG, N沟道 IGBT 晶体管, 90 A, Vce=600 V, 1MHz, 3针 TO-247封装
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
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| Current - Collector Pulsed (Icm) | 180A |
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| Power - Max | 300W |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | -/151ns |
| Part Status | Active |
| Manufacturer | ON Semiconductor |
| Gate Charge | 135nC |
| Family | Transistors - IGBTs - Single |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 45A |
| Input Type | Standard |
| Package / Case | TO-247-3 |
| Test Condition | 400V, 45A, 10 Ohm, 15V |
| Supplier Device Package | TO-247-3 |
| Current - Collector (Ic) (Max) | 90A |
| Category | Discrete Semiconductor Products |
| Reverse Recovery Time (trr) | 498ns |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Mounting Type | Through Hole |
| Switching Energy | 360µJ (off) |
| Packaging | Tube |
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