| IPW65R190C7 | ||
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| 产品描述：
IPW65R190C7 MOSFET 晶体管
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| 标准包装：3 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Packaging: | Tube |
|---|---|
| Qg - Gate Charge: | 23 nC |
| Pd - Power Dissipation: | 72 W |
| Tradename: | CoolMOS |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Mounting Style: | Through Hole |
| Typical Turn-On Delay Time: | 11 ns |
| Series: | CoolMOS C7 |
| Factory Pack Quantity: | 240 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 54 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 168 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-247-3 |
| Configuration: | Single |
| Unit Weight: | 1.340411 oz |
| Fall Time: | 9 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | IPW65R190C7XKSA1 SP001080142 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 13 A |
| Rise Time: | 11 ns |
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