IPW65R190C7
IPW65R190C7
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Product description : IPW65R190C7 MOSFET 晶体管
SPQ:3
Datasheet : --
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Packaging: Tube
Qg - Gate Charge: 23 nC
Pd - Power Dissipation: 72 W
Tradename: CoolMOS
Vgs th - Gate-Source Threshold Voltage: 3.5 V
Vgs - Gate-Source Voltage: +/- 20 V
Mounting Style: Through Hole
Typical Turn-On Delay Time: 11 ns
Series: CoolMOS C7
Factory Pack Quantity: 240
Brand: Infineon Technologies
Typical Turn-Off Delay Time: 54 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 650 V
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 168 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: TO-247-3
Configuration: Single
Unit Weight: 1.340411 oz
Fall Time: 9 ns
Manufacturer: Infineon
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: IPW65R190C7XKSA1 SP001080142
RoHS:  Details
Id - Continuous Drain Current: 13 A
Rise Time: 11 ns
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Supplier Code:SP1034

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

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stock106Update On
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