| LND150N3-G | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Transistor: N-MOSFET; unipolar; 500V; 0.03A; 740mW; TO92
|
||
| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Package / Case | BAG |
|---|---|
| FET Feature | Depletion Mode |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 30mA (Tj) |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 10pF @ 25V |
| ECCN | EAR99 |
| Rds On (Max) @ Id, Vgs | 1000 Ohm @ 500µA, 0V |
| Power - Max | 740mW |
| Supplier Device Package | TO-92-3 |
| Part Status | Active |
| Manufacturer | Microchip Technology |
| Family | Transistors - FETs, MOSFETs - Single |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Bulk |
| SDP | 3-TO-92 |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：