| SIHB30N60E-GE3 | ||
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| 产品描述：
E-Series N-Channel 600 V 0.125 Ohm 130 nC Surface Mount Power Mosfet - D2PAK
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| 标准包装：1 | ||
| 数据手册： -- |
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| Minimum Operating Temperature: | - 55 C |
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| Rds On - Drain-Source Resistance: | 125 mOhms |
| Pd - Power Dissipation: | 250 W |
| Tradename: | TrenchFET |
| Configuration: | Single |
| Unit Weight: | 0.050717 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 19 ns |
| Manufacturer: | Vishay |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 63 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Type: | E Series Power MOSFET |
| Maximum Operating Temperature: | + 150 C |
| Qg - Gate Charge: | 85 nC |
| Packaging: | Tube |
| Technology: | Si |
| Package / Case: | TO-252-3 |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 36 ns |
| Forward Transconductance - Min: | 5.4 S |
| Series: | E |
| Factory Pack Quantity: | 1000 |
| Brand: | Vishay Semiconductors |
| RoHS: | Details |
| Id - Continuous Drain Current: | 29 A |
| Rise Time: | 32 ns |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
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