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| 产品描述：
PNP 1.3 W 60 V 5 A Through Hole Epitaxial Silicon Transistor - TO-126-3
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| 标准包装：1920 | ||
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| Vce Saturation (Max) @ Ib, Ic | 300mV @ 200mA, 2A |
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| Power - Max | 1.3W |
| Supplier Device Package | TO-126-3 |
| Part Status | Active |
| Manufacturer | Fairchild Semiconductor |
| Family | Transistors - Bipolar (BJT) - Single |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 5A |
| Category | Discrete Semiconductor Products |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Mounting Type | Through Hole |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 2A, 1V |
| ECCN | EAR99 |
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