IXYN82N120C3H1 specifications -Ameya360 electronic components purchase network


IXYN82N120C3H1

ACTIVE EAR99
Product description : Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 66A; SOT227B
SPQ：10
Datasheet : IXYN82N120C3H1.pdf

Collector-Emitter Saturation Voltage:	2.75 V
Continuous Collector Current Ic Max:	105 A
Series:	IXYN82N120
Continuous Collector Current at 25 C:	105 A
Factory Pack Quantity:	10
Tradename:	XPT
Package / Case:	SOT-227B-4
Product Category:	IGBT Transistors
Configuration:	Single
Mounting Style:	SMD/SMT
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Manufacturer:	IXYS
Pd - Power Dissipation:	500 W
Minimum Operating Temperature:	- 55 C
Brand:	IXYS
RoHS:	Details
Gate-Emitter Leakage Current:	100 nA
Collector- Emitter Voltage VCEO Max:	1200 V
Unit Weight:	1.340411 oz
Maximum Gate Emitter Voltage:	30 V
ECCN	EAR99

Datasheet： IXYN82N120C3H1.pdf

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Stock code :	562338
Mfg name :	IXYS Corporation
MPN :	IXYN82N120C3H1
Product description :	Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 66A; SOT227B

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