| IXYH82N120C3 | ||
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| 产品描述：
Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO247-3
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| 标准包装：1 | ||
| 数据手册： |
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| Collector-Emitter Saturation Voltage: | 2.75 V |
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| Continuous Collector Current Ic Max: | 160 A |
| Series: | IXYH82N120 |
| Continuous Collector Current at 25 C: | 160 A |
| Factory Pack Quantity: | 30 |
| Tradename: | XPT |
| Package / Case: | TO-247-3 |
| Product Category: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Tube |
| Manufacturer: | IXYS |
| Pd - Power Dissipation: | 1040 W |
| Minimum Operating Temperature: | - 55 C |
| Brand: | IXYS |
| RoHS: | Details |
| Gate-Emitter Leakage Current: | 100 nA |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Unit Weight: | 1.340411 oz |
| Maximum Gate Emitter Voltage: | 30 V |
| ECCN | EAR99 |
| 数据手册： |
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