| IXTZ550N055T2 | ||
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| 产品描述：
N Channel 55 V 550 A 1 mOhm TrenchT2 GigaMOS Power Mosfet - DE475
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| 标准包装：20 | ||
| 数据手册： |
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| Width: | 23.11 mm |
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| Rds On - Drain-Source Resistance: | 1 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | DE-475-6 |
| Height: | 3.18 mm |
| Mounting Style: | SMD/SMT |
| Typical Turn-On Delay Time: | 45 ns |
| Forward Transconductance - Min: | 95 s |
| Series: | IXTZ550N055 |
| Factory Pack Quantity: | 20 |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | 550 A |
| Rise Time: | 40 ns |
| Maximum Operating Temperature: | + 175 C |
| Packaging: | Tube |
| Qg - Gate Charge: | 595 nC |
| Pd - Power Dissipation: | 600 W |
| Tradename: | TrenchT2, GigaMOS |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Fall Time: | 230 ns |
| Length: | 21.08 mm |
| Manufacturer: | IXYS |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 90 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 55 V |
| Type: | TrenchT2 GigaMOS Power MOSFET |
| ECCN | EAR99 |
| 数据手册： |
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