IXTT88N30P
IXTT88N30P
  • 量产中
  • EAR99
产品描述:
Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
标准包装:1
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Width: 16.05 mm
Rds On - Drain-Source Resistance: 40 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: TO-268-2
Height: 5.1 mm
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 25 ns
Length: 14 mm
Manufacturer: IXYS
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 96 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 300 V
Type: PolarHT Power MOSFET
Maximum Operating Temperature: + 150 C
Packaging: Tube
Qg - Gate Charge: 180 nC
Pd - Power Dissipation: 600 W
Tradename: PolarHT
Vgs th - Gate-Source Threshold Voltage: 5 V
Configuration: Single
Unit Weight: 0.158733 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 25 ns
Forward Transconductance - Min: 45 S
Series: IXTT88N30
Factory Pack Quantity: 30
Brand: IXYS
RoHS:  Details
Id - Continuous Drain Current: 88 A
Rise Time: 24 ns
Transistor Type: 1 N-Channel
ECCN EAR99
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