| IXTT20N50D | ||
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| 产品描述：
Single N-Channel 500 V 330 mOhm 400 W Power Mosfet - TO-268
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| 标准包装：1 | ||
| 数据手册： |
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| Width: | 16.05 mm |
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| Rds On - Drain-Source Resistance: | 330 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | - 3.5 V |
| Configuration: | Single |
| Unit Weight: | 0.158733 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 35 ns |
| Forward Transconductance - Min: | 4 S |
| Series: | IXTT20N50 |
| Factory Pack Quantity: | 30 |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | 20 A |
| Rise Time: | 85 ns |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Packaging: | Tube |
| Qg - Gate Charge: | 78.5 nC |
| Pd - Power Dissipation: | 400 W |
| Package / Case: | TO-268-2 |
| Height: | 5.1 mm |
| Vgs - Gate-Source Voltage: | 30 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 75 ns |
| Length: | 14 mm |
| Manufacturer: | IXYS |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Depletion |
| Typical Turn-Off Delay Time: | 110 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Type: | High Voltage MOSFET |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
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