IXTP44P15T specifications -Ameya360 electronic components purchase network


IXTP44P15T

ACTIVE EAR99
Product description : Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
SPQ：1
Datasheet : IXTP44P15T.pdf

Packaging:	Tube
Qg - Gate Charge:	175 nC
Pd - Power Dissipation:	298 W
Package / Case:	TO-220-3
Configuration:	Single
Unit Weight:	0.081130 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	25 ns
Manufacturer:	IXYS
Transistor Polarity:	P-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	50 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 150 V
Transistor Type:	1 P-Channel
ECCN	EAR99
Rds On - Drain-Source Resistance:	65 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	- 2 V to - 4 V
Vgs - Gate-Source Voltage:	15 V
Mounting Style:	Through Hole
Fall Time:	17 ns
Forward Transconductance - Min:	45 S
Series:	IXTP44P15
Factory Pack Quantity:	50
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	- 44 A
Rise Time:	42 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： IXTP44P15T.pdf

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Stock code :	562144
Mfg name :	IXYS Corporation
MPN :	IXTP44P15T
Product description :	Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns

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