IXTP36N30P specifications -Ameya360 electronic components purchase network


IXTP36N30P

ACTIVE EAR99
Product description : Single N-Channel 300 V 110 mOhm 300 W Power Mosfet - TO-220
SPQ：50
Datasheet : IXTP36N30P.pdf

Width:	4.83 mm
Rds On - Drain-Source Resistance:	92 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-220-3
Height:	16 mm
Vgs - Gate-Source Voltage:	30 V
Mounting Style:	Through Hole
Fall Time:	28 ns
Length:	10.66 mm
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	97 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	300 V
Type:	PolarHT Power MOSFET
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Qg - Gate Charge:	70 nC
Pd - Power Dissipation:	300 W
Tradename:	PolarHT
Vgs th - Gate-Source Threshold Voltage:	5.5 V
Configuration:	Single
Unit Weight:	0.081130 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	24 ns
Forward Transconductance - Min:	12 S
Series:	IXTP36N30
Factory Pack Quantity:	50
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	36 A
Rise Time:	30 ns
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IXTP36N30P.pdf

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Stock code :	562134
Mfg name :	IXYS Corporation
MPN :	IXTP36N30P
Product description :	Single N-Channel 300 V 110 mOhm 300 W Power Mosfet - TO-220

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