| IXTH80N20L | ||
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| 产品描述：
IXTH80N20L Series 200 V 80 A N-Channel Power Mosfet - TO-247-3
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| 标准包装：30 | ||
| 数据手册： |
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| Packaging: | Tube |
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| Qg - Gate Charge: | 180 nC |
| Pd - Power Dissipation: | 520 W |
| Package / Case: | TO-247-3 |
| Mounting Style: | Through Hole |
| Fall Time: | 29 ns |
| Forward Transconductance - Min: | 30 S |
| Series: | IXTH80N20 |
| Factory Pack Quantity: | 30 |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | 80 A |
| Rise Time: | 44 ns |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 32 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs - Gate-Source Voltage: | 20 V |
| Unit Weight: | 0.056438 oz |
| Typical Turn-On Delay Time: | 29 ns |
| Manufacturer: | IXYS |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 72 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Maximum Operating Temperature: | + 150 C |
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