IXTH60N20L2 specifications -Ameya360 electronic components purchase network


IXTH60N20L2

ACTIVE EAR99
Product description : N-Channel 200 V 60 A 0.045 Ohm Mosfet TO-247
SPQ：30
Datasheet : IXTH60N20L2.pdf

Width:	5.3 mm
Rds On - Drain-Source Resistance:	45 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-247-3
Height:	21.46 mm
Unit Weight:	0.229281 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	26 ns
Forward Transconductance - Min:	35 S
Series:	IXTH60N20
Factory Pack Quantity:	30
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	60 A
Rise Time:	23 ns
Transistor Type:	1 N-Channel
ECCN	EAR99
Packaging:	Tube
Qg - Gate Charge:	255 nC
Pd - Power Dissipation:	540 W
Tradename:	Linear L2
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	18 ns
Length:	16.26 mm
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	90 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	200 V
Type:	Linear L2 Power MOSFET
Maximum Operating Temperature:	+ 150 C

Datasheet： IXTH60N20L2.pdf

You can comment after logging in.

Please inform us of the error for improving our site and products.

Type of Error

	Product description/Specifications
	Image
	Data sheet
	Search
	Associated/Alternative Product
	Prices
	Other

Explanation (Character Limit: 500)

Name:

Email(We may contact you about this problem.)

placeholder

PART	Quantity*	Target Price
	Quantity MOQ:	Target Price $ If not sure, you may skip this
remark

placeholder

PART	Quantity*	Target Price	Expected LeadTime
	Quantity	Target Price $ If not sure, you may skip this	Expected LeadTime If not sure, you may skip this
remark

Please enter the verification code in the image below：