IXTH11P50 specifications -Ameya360 electronic components purchase network


IXTH11P50

ACTIVE EAR99
Product description : Single P-Channel 500 V 750 mOhm 300 W Power Mosfet - TO-247 AD
SPQ：30
Datasheet : IXTH11P50.pdf

Width:	5.3 mm
Rds On - Drain-Source Resistance:	750 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	- 0.122 V
Configuration:	Single
Unit Weight:	0.229281 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	33 ns
Forward Transconductance - Min:	5 S
Series:	IXTH11P50
Factory Pack Quantity:	30
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	- 11 A
Rise Time:	27 ns
Transistor Type:	1 P-Channel
ECCN	EAR99
Packaging:	Tube
Qg - Gate Charge:	130 nC
Pd - Power Dissipation:	300 W
Package / Case:	TO-247-3
Height:	21.46 mm
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	35 ns
Length:	16.26 mm
Manufacturer:	IXYS
Transistor Polarity:	P-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	35 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 500 V
Type:	Standard Power MOSFET
Maximum Operating Temperature:	+ 150 C

Datasheet： IXTH11P50.pdf

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Stock code :	561994
Mfg name :	IXYS Corporation
MPN :	IXTH11P50
Product description :	Single P-Channel 500 V 750 mOhm 300 W Power Mosfet - TO-247 AD

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