IXTA26P20P specifications -Ameya360 electronic components purchase network


IXTA26P20P

ACTIVE EAR99
Product description : Single P-Channel 200 Vds 170 mOhm 300 W Power Mosfet - TO-263-3
SPQ：50
Datasheet : IXTA26P20P.pdf

Width:	9.65 mm
Rds On - Drain-Source Resistance:	170 mOhms
Pd - Power Dissipation:	300 W
Package / Case:	TO-252-3
Configuration:	Single
Unit Weight:	0.056438 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	18 ns
Manufacturer:	IXYS
Transistor Polarity:	P-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	46 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 200 V
Transistor Type:	1 P-Channel
ECCN	EAR99
Packaging:	Tube
Minimum Operating Temperature:	- 55 C
Technology:	Si
Height:	4.83 mm
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	21 ns
Length:	10.41 mm
Series:	IXTA26P20
Factory Pack Quantity:	50
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	26 A
Rise Time:	33 ns
Maximum Operating Temperature:	+ 175 C

Datasheet： IXTA26P20P.pdf

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Stock code :	561951
Mfg name :	IXYS Corporation
MPN :	IXTA26P20P
Product description :	Single P-Channel 200 Vds 170 mOhm 300 W Power Mosfet - TO-263-3

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