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| 产品描述：
Single N-Channel 600 V 560 W 330 nC Through Hole Power Mosfet - PLUS247
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| 标准包装：30 | ||
| 数据手册： |
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| FET Feature | Standard |
|---|---|
| Package / Case | TO-247-3 |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Part Status | Active |
| Manufacturer | IXYS |
| Series | HiPerFET™ |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tube |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 22A, 10V |
| Power - Max | 560W |
| Supplier Device Package | PLUS247™-3 |
| Gate Charge (Qg) @ Vgs | 330nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 8900pF @ 25V |
| ECCN | EAR99 |
| 数据手册： |
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