| IXFT60N50P3 | ||
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| 产品描述：
Single N-Channel 500 V 100 mOhm 1040 W Power Mosfet - TO-268
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| 标准包装：30 | ||
| 数据手册： |
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| Packaging: | Tube |
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| Qg - Gate Charge: | 96 nC |
| Technology: | Si |
| Package / Case: | TO-268-2 |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Forward Transconductance - Min: | 60 S, 35 S |
| Series: | IXFT60N50 |
| Factory Pack Quantity: | 30 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 60 A |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 100 mOhms |
| Pd - Power Dissipation: | 1040 W |
| Tradename: | HyperFET |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Vgs - Gate-Source Voltage: | 30 V |
| Unit Weight: | 0.229281 oz |
| Fall Time: | 8 ns |
| Manufacturer: | IXYS |
| Transistor Polarity: | N-Channel |
| Brand: | IXYS |
| Product Category: | MOSFET |
| Rise Time: | 16 ns |
| Transistor Type: | 1 N-Channel |
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