IXFT60N50P3 specifications -Ameya360 electronic components purchase network


IXFT60N50P3

ACTIVE EAR99
Product description : Single N-Channel 500 V 100 mOhm 1040 W Power Mosfet - TO-268
SPQ：30
Datasheet : IXFT60N50P3.pdf

Packaging:	Tube
Qg - Gate Charge:	96 nC
Technology:	Si
Package / Case:	TO-268-2
Configuration:	Single
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Forward Transconductance - Min:	60 S, 35 S
Series:	IXFT60N50
Factory Pack Quantity:	30
RoHS:	Details
Id - Continuous Drain Current:	60 A
Vds - Drain-Source Breakdown Voltage:	500 V
ECCN	EAR99
Rds On - Drain-Source Resistance:	100 mOhms
Pd - Power Dissipation:	1040 W
Tradename:	HyperFET
Vgs th - Gate-Source Threshold Voltage:	5 V
Vgs - Gate-Source Voltage:	30 V
Unit Weight:	0.229281 oz
Fall Time:	8 ns
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Brand:	IXYS
Product Category:	MOSFET
Rise Time:	16 ns
Transistor Type:	1 N-Channel

Datasheet： IXFT60N50P3.pdf

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Stock code :	561761
Mfg name :	IXYS Corporation
MPN :	IXFT60N50P3
Product description :	Single N-Channel 500 V 100 mOhm 1040 W Power Mosfet - TO-268

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