IXFR44N80P specifications -Ameya360 electronic components purchase network


IXFR44N80P

ACTIVE EAR99
Product description : Single N-Channel 800 V 300 W 200 nC HiPerFET Power Mosfet - ISOPLUS247
SPQ：30
Datasheet : IXFR44N80P.pdf

Width:	5.21 mm
Rds On - Drain-Source Resistance:	200 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-247-3
Height:	21.34 mm
Vgs - Gate-Source Voltage:	30 V
Mounting Style:	Through Hole
Fall Time:	27 ns
Length:	16.13 mm
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	75 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	800 V
Type:	PolarHV HiPerFET Power MOSFET
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Qg - Gate Charge:	200 nC
Pd - Power Dissipation:	300 W
Tradename:	PolarHV, HiPerFET
Vgs th - Gate-Source Threshold Voltage:	5 V
Configuration:	Single
Unit Weight:	0.186952 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	28 ns
Forward Transconductance - Min:	27 S
Series:	IXFR44N80
Factory Pack Quantity:	30
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	25 A
Rise Time:	22 ns
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IXFR44N80P.pdf

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Stock code :	561734
Mfg name :	IXYS Corporation
MPN :	IXFR44N80P
Product description :	Single N-Channel 800 V 300 W 200 nC HiPerFET Power Mosfet - ISOPLUS247

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