IXFA6N120P specifications -Ameya360 electronic components purchase network


IXFA6N120P

ACTIVE TO-263 (IXFA) EAR99
Product description : Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 6A; 250W; TO263
SPQ：1
Datasheet : IXFA6N120P.pdf

FET Feature	Standard
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Part Status	Active
Manufacturer	IXYS
Series	HiPerFET™, PolarP2™
Vgs(th) (Max) @ Id	5V @ 1mA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tube
Rds On (Max) @ Id, Vgs	2.4 Ohm @ 500mA, 10V
Power - Max	250W
Supplier Device Package	TO-263 (IXFA)
Gate Charge (Qg) @ Vgs	92nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	2830pF @ 25V
ECCN	EAR99

Datasheet： IXFA6N120P.pdf

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Stock code :	561462
Mfg name :	IXYS Corporation
MPN :	IXFA6N120P
Product description :	Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 6A; 250W; TO263

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