IXBF40N160 specifications -Ameya360 electronic components purchase network


IXBF40N160

ACTIVE EAR99
Product description : Transistor: IGBT; BiMOSFET™; 1.6kV; 16A; 250W
SPQ：1
Datasheet : IXBF40N160.pdf

Collector-Emitter Saturation Voltage:	6.2 V
Packaging:	Tube
Minimum Operating Temperature:	- 55 C
Pd - Power Dissipation:	250 W
Gate-Emitter Leakage Current:	500 nA
Height:	20.88 mm
Mounting Style:	Through Hole
Length:	19.91 mm
Manufacturer:	IXYS
Factory Pack Quantity:	25
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	1.6 kV
Maximum Operating Temperature:	+ 150 C
Width:	5.03 mm
Continuous Collector Current at 25 C:	28 A
Operating Temperature Range:	- 55 C to + 150 C
Tradename:	BIMOSFET
Package / Case:	ISOPLUS i4-PAC-3
Configuration:	Single
Continuous Collector Current Ic Max:	40 A
Continuous Collector Current:	28 A
Series:	IXBF40N160
Brand:	IXYS
Product Category:	IGBT Transistors
Maximum Gate Emitter Voltage:	+/- 20 V
ECCN	EAR99

Datasheet： IXBF40N160.pdf

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Stock code :	561326
Mfg name :	IXYS Corporation
MPN :	IXBF40N160
Product description :	Transistor: IGBT; BiMOSFET™; 1.6kV; 16A; 250W

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