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| 产品描述：
Transistor: IGBT; 600V; 76A; 268W; TO247-3
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| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
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| Collector-Emitter Saturation Voltage: | 1.85 V |
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| Packaging: | Tube |
| Manufacturer: | Infineon |
| Continuous Collector Current at 25 C: | 76 A |
| Brand: | Infineon Technologies |
| Gate-Emitter Leakage Current: | 100 nA |
| Product Category: | IGBT Transistors |
| Height: | 20.7 mm |
| Mounting Style: | Through Hole |
| ECCN | EAR99 |
| Width: | 5.31 mm |
| Length: | 15.87 mm |
| Pd - Power Dissipation: | 268 W |
| Factory Pack Quantity: | 25 |
| RoHS: | Details |
| Package / Case: | TO-247AD-3 |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Unit Weight: | 1.340411 oz |
| Maximum Gate Emitter Voltage: | 20 V |
| 数据手册： |
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