IRFSL11N50APBF specifications -Ameya360 electronic components purchase network


IRFSL11N50APBF

ACTIVE EAR99
Product description : Single N-Channel 500 V 0.55 Ohms Through Hole Power Mosfet - TO-262
SPQ：50
Datasheet : IRFSL11N50APBF.pdf

Width:	4.83 mm
Rds On - Drain-Source Resistance:	550 mOhms
Pd - Power Dissipation:	190 W
Package / Case:	TO-262-3
Configuration:	Single
Unit Weight:	0.084199 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	14 ns
Manufacturer:	Vishay
Factory Pack Quantity:	1000
Brand:	Vishay Semiconductors
RoHS:	Details
Id - Continuous Drain Current:	11 A
Rise Time:	34 ns
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Minimum Operating Temperature:	- 55 C
Technology:	Si
Height:	9.65 mm
Vgs - Gate-Source Voltage:	30 V
Mounting Style:	Through Hole
Fall Time:	27 ns
Length:	10.67 mm
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	32 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	500 V
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IRFSL11N50APBF.pdf

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Stock code :	558310
Mfg name :	Vishay
MPN :	IRFSL11N50APBF
Product description :	Single N-Channel 500 V 0.55 Ohms Through Hole Power Mosfet - TO-262

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