| IPP060N06N | ||
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| Product description : 60V,6mΩ,45A,N-Channel Power MOSFET | ||
| SPQ：500 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| FET Feature | Standard |
|---|---|
| Package / Case | TO-220-3 |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 45A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Vgs(th) (Max) @ Id | 2.8V @ 36µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Tube |
| Rds On (Max) @ Id, Vgs | 6 mOhm @ 45A, 10V |
| Power - Max | 3W |
| Supplier Device Package | PG-TO-220-3 |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 2000pF @ 30V |
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- P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
- Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
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