| IPB031NE7N3 G | ||
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| 产品描述： | ||
| 标准包装：1000 | ||
| 数据手册： |
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| Packaging: | Reel |
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| Qg - Gate Charge: | 88 nC |
| Pd - Power Dissipation: | 214 W |
| Tradename: | OptiMOS |
| Vgs th - Gate-Source Threshold Voltage: | 3.1 V |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Part # Aliases: | IPB031NE7N3GATMA1 IPB031NE7N3GXT SP000641730 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 100 A |
| Transistor Type: | 1 N-Channel |
| Rds On - Drain-Source Resistance: | 3.1 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-252-3 |
| Vgs - Gate-Source Voltage: | 20 V |
| Unit Weight: | 0.139332 oz |
| Forward Transconductance - Min: | 150 S, 75 S |
| Series: | OptiMOS 3 |
| Factory Pack Quantity: | 1000 |
| Brand: | Infineon Technologies |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 75 V |
| Maximum Operating Temperature: | + 175 C |
| 数据手册： |
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