| IPA90R800C3 | ||
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| 产品描述：
900V,800mΩ,6.9A,N-Channel Power MOSFET
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| 标准包装：500 | ||
| 数据手册： |
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| Width: | 4.85 mm |
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| Rds On - Drain-Source Resistance: | 800 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-220-3 |
| Configuration: | Single |
| Unit Weight: | 0.211644 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 70 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | IPA90R800C3XK IPA90R800C3XKSA1 SP000413718 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 6.9 A |
| Rise Time: | 20 ns |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Tube |
| Qg - Gate Charge: | 42 nC |
| Pd - Power Dissipation: | 33 W |
| Tradename: | CoolMOS |
| Height: | 9.83 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 32 ns |
| Length: | 10.65 mm |
| Series: | CoolMOS C3 |
| Factory Pack Quantity: | 500 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 400 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 900 V |
| Transistor Type: | 1 N-Channel |
| 数据手册： |
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