IPA90R800C3 specifications -Ameya360 electronic components purchase network


IPA90R800C3

ACTIVE
Product description : 900V,800mΩ,6.9A,N-Channel Power MOSFET
SPQ：500
Datasheet : IPA90R800C3.pdf

Width:	4.85 mm
Rds On - Drain-Source Resistance:	800 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-220-3
Configuration:	Single
Unit Weight:	0.211644 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	70 ns
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Part # Aliases:	IPA90R800C3XK IPA90R800C3XKSA1 SP000413718
RoHS:	Details
Id - Continuous Drain Current:	6.9 A
Rise Time:	20 ns
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Qg - Gate Charge:	42 nC
Pd - Power Dissipation:	33 W
Tradename:	CoolMOS
Height:	9.83 mm
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	32 ns
Length:	10.65 mm
Series:	CoolMOS C3
Factory Pack Quantity:	500
Brand:	Infineon Technologies
Typical Turn-Off Delay Time:	400 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	900 V
Transistor Type:	1 N-Channel

Datasheet： IPA90R800C3.pdf

You can comment after logging in.

Please inform us of the error for improving our site and products.

Type of Error

	Product description/Specifications
	Image
	Data sheet
	Search
	Associated/Alternative Product
	Prices
	Other

Explanation (Character Limit: 500)

Name:

Email(We may contact you about this problem.)

placeholder

PART	Quantity*	Target Price
	Quantity MOQ:	Target Price $ If not sure, you may skip this
remark

placeholder

PART	Quantity*	Target Price	Expected LeadTime
	Quantity	Target Price $ If not sure, you may skip this	Expected LeadTime If not sure, you may skip this
remark

Please enter the verification code in the image below：