| IKW40N120H3 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; Series: H3
|
||
| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Collector-Emitter Saturation Voltage: | 2.05 V |
|---|---|
| Continuous Collector Current Ic Max: | 80 A |
| Series: | IKW40N120 |
| Continuous Collector Current at 25 C: | 80 A |
| Factory Pack Quantity: | 240 |
| Brand: | Infineon Technologies |
| Package / Case: | TO-247-3 |
| Product Category: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Maximum Operating Temperature: | + 175 C |
| Packaging: | Tube |
| Manufacturer: | Infineon |
| Pd - Power Dissipation: | 483 W |
| Minimum Operating Temperature: | - 40 C |
| Part # Aliases: | IKW40N120H3FKSA1 IKW40N120H3XK SP000674416 |
| RoHS: | Details |
| Gate-Emitter Leakage Current: | 600 nA |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Unit Weight: | 1.340411 oz |
| Maximum Gate Emitter Voltage: | +/- 20 V |
| RoHS | Lead free / RoHS Compliant |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：