HGT1S10N120BNST specifications -Ameya360 electronic components purchase network


HGT1S10N120BNST

ACTIVE EAR99
Product description : HGT1S10N120BN Series 1200 V 35 A 298 W SMT NPT N-Channel IGBT - TO-263AB
SPQ：1
Datasheet : HGT1S10N120BNST.pdf

Packaging:	Reel
Collector-Emitter Saturation Voltage:	2.7 V
Continuous Collector Current:	55 A
Manufacturer:	Fairchild Semiconductor
Minimum Operating Temperature:	- 55 C
Factory Pack Quantity:	800
RoHS:	Details
Gate-Emitter Leakage Current:	+/- 250 nA
Collector- Emitter Voltage VCEO Max:	1200 V
Configuration:	Single
Mounting Style:	SMD/SMT
Maximum Gate Emitter Voltage:	+/- 20 V
Width:	9.65 mm
Continuous Collector Current Ic Max:	35 A
Length:	10.67 mm
Pd - Power Dissipation:	298 W
Continuous Collector Current at 25 C:	35 A
Brand:	Fairchild Semiconductor
Package / Case:	TO-263AB-3
Product Category:	IGBT Transistors
Height:	4.83 mm
Unit Weight:	0.046296 oz
Maximum Operating Temperature:	+ 150 C
ECCN	EAR99

Datasheet： HGT1S10N120BNST.pdf

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Stock code :	549084
Mfg name :	onsemi
MPN :	HGT1S10N120BNST
Product description :	HGT1S10N120BN Series 1200 V 35 A 298 W SMT NPT N-Channel IGBT - TO-263AB

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