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| Product description : Single N-Channel 100 V 14 mOhm 140 nC HEXFET® Power Mosfet - D2PAK | ||
| SPQ：1 | ||
| Datasheet : |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Power - Max | 190W |
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| Rds On (Max) @ Id, Vgs | 14 mOhm @ 44A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| FET Feature | Standard |
| Supplier Device Package | D2PAK |
| Gate Charge (Qg) @ Vgs | 140nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 3550pF @ 50V |
| ECCN | EAR99 |
| Datasheet： |
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Supplier Stock
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| stock | 5600 | Update On 2025-06-03 |
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| Lead-Time | -- | |
| SPQ/MOQ | 1/1 | |
| Location | -- | |
| DateCode | -- |
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