| FQU1N60CTU | ||
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| 产品描述：
N-Channel 600 V 11.5 Ohm Through Hole Mosfet -TO-251AA
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| 标准包装：1 | ||
| 数据手册： |
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| Rds On - Drain-Source Resistance: | 11.5 Ohms |
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| Width: | 2.3 mm |
| Pd - Power Dissipation: | 2.5 W |
| Package / Case: | TO-220-3 |
| Configuration: | Single |
| Unit Weight: | 0.012102 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 7 ns |
| Forward Transconductance - Min: | 0.75 S |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | FQU1N60CTU_NL |
| RoHS: | Details |
| Id - Continuous Drain Current: | 1 A |
| Rise Time: | 21 ns |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Packaging: | Bulk |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Height: | 6.1 mm |
| Vgs - Gate-Source Voltage: | 30 V |
| Mounting Style: | Through Hole |
| Fall Time: | 27 ns |
| Length: | 6.6 mm |
| Manufacturer: | Fairchild Semiconductor |
| Factory Pack Quantity: | 5040 |
| Brand: | Fairchild Semiconductor |
| Typical Turn-Off Delay Time: | 13 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Type: | MOSFET |
| Maximum Operating Temperature: | + 150 C |
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