FQH8N100C specifications -Ameya360 electronic components purchase network


FQH8N100C

ACTIVE EAR99
Product description : N-Channel 1 kV 1.45 Ohm 225 W Flange Mount Q-FET Mosfet - TO-247
SPQ：1
Datasheet : FQH8N100C.pdf

Rds On - Drain-Source Resistance:	1.45 Ohms
Width:	4.82 mm
Pd - Power Dissipation:	225 W
Package / Case:	TO-247-3
Configuration:	Single
Unit Weight:	0.225401 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	50 ns
Manufacturer:	Fairchild Semiconductor
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	122 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	1000 V
Transistor Type:	1 N-Channel
ECCN	EAR99
Packaging:	Bulk
Minimum Operating Temperature:	- 55 C
Technology:	Si
Height:	20.82 mm
Vgs - Gate-Source Voltage:	30 V
Mounting Style:	Through Hole
Fall Time:	80 ns
Length:	15.87 mm
Series:	QFET
Factory Pack Quantity:	450
Brand:	Fairchild Semiconductor
RoHS:	Details
Id - Continuous Drain Current:	8 A
Rise Time:	95 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： FQH8N100C.pdf

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Stock code :	534529
Mfg name :	onsemi
MPN :	FQH8N100C
Product description :	N-Channel 1 kV 1.45 Ohm 225 W Flange Mount Q-FET Mosfet - TO-247

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