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| 产品描述：
Single N-Channel 200 V 125 mW 90 nC Through Hole Power Mosfet - ISOPLUS i4-Pak
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| 标准包装：25 | ||
| 数据手册： |
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| FET Feature | Standard |
|---|---|
| Package / Case | i4-Pac™-5 |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 33A |
| Part Status | Active |
| Manufacturer | IXYS |
| Series | HiPerFET™ |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tube |
| Rds On (Max) @ Id, Vgs | 40 mOhm @ 30A, 10V |
| Power - Max | 125W |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Gate Charge (Qg) @ Vgs | 90nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | 2 N-Channel (Dual) |
| Family | Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 3700pF @ 25V |
| ECCN | EAR99 |
| 数据手册： |
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