| FMM110-015X2F | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
150V 53A 20 mOhms N-ch ISOPLUS i4-PAC
|
||
| 标准包装：25 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Width: | 5.21 mm |
|---|---|
| Rds On - Drain-Source Resistance: | 20 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | ISOPLUS-i4-5 |
| Height: | 21.34 mm |
| Vgs - Gate-Source Voltage: | 30 V |
| Mounting Style: | Through Hole |
| Fall Time: | 18 ns |
| Length: | 20.29 mm |
| Manufacturer: | IXYS |
| Transistor Polarity: | N-Channel |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | 53 A |
| Rise Time: | 16 ns |
| Transistor Type: | 2 N-Channel |
| ECCN | EAR99 |
| Packaging: | Tube |
| Qg - Gate Charge: | 150 nC |
| Pd - Power Dissipation: | 180 W |
| Tradename: | TrenchT2 |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
| Configuration: | Dual |
| Unit Weight: | 0.229281 oz |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 33 ns |
| Forward Transconductance - Min: | 75 S |
| Series: | FMM110-015X2F |
| Factory Pack Quantity: | 25 |
| Typical Turn-Off Delay Time: | 33 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Type: | TrenchT2 HiperFET N-Channel Power MOSFET |
| Maximum Operating Temperature: | + 175 C |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：