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| 产品描述：
P-Channel 50 V 6 Ohm 425 mW Enhancement Mode Mosfet - X1-DFN1006-3
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| 标准包装：1 | ||
| 数据手册： |
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| FET Feature | Standard |
|---|---|
| Package / Case | 3-UFDFN |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Part Status | Active |
| Manufacturer | Diodes Incorporated |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 50.54pF @ 25V |
| ECCN | EAR99 |
| Rds On (Max) @ Id, Vgs | 6 Ohm @ 100mA, 4V |
| Power - Max | 425mW |
| Supplier Device Package | 3-DFN1006 (1.0x0.6) |
| Gate Charge (Qg) @ Vgs | 0.58nC @ 4V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
| 数据手册： |
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