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| 产品描述：
Dual P-Channel 20 V 900 mOhm Enhancement Mode Mosfet - SOT-563
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| 标准包装：1 | ||
| 数据手册： |
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| Packaging: | Reel |
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| Product: | MOSFET Small Signal |
| Minimum Operating Temperature: | - 65 C |
| Technology: | Si |
| Height: | 0.6 mm |
| Vgs - Gate-Source Voltage: | 8 V |
| Unit Weight: | 0.000106 oz |
| Length: | 1.6 mm |
| Series: | DMP2004 |
| Factory Pack Quantity: | 3000 |
| Brand: | Diodes Incorporated |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 20 V |
| Maximum Operating Temperature: | + 150 C |
| Width: | 1.2 mm |
| Rds On - Drain-Source Resistance: | 900 mOhms |
| Pd - Power Dissipation: | 400 mW |
| Package / Case: | SOT-563-6 |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Manufacturer: | Diodes Incorporated |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| RoHS: | Details |
| Id - Continuous Drain Current: | 530 mA |
| Transistor Type: | 2 P-Channel |
| ECCN | EAR99 |
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