| DMN3018SSS-13 | ||
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| 产品描述：
N-Channel 30 V 21 mΩ 13.2 nC SMT Enhancement Mode Mosfet - SOIC-8
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| 标准包装：1 | ||
| 数据手册： |
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| Qg - Gate Charge: | 6 nC |
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| Packaging: | Reel |
| Pd - Power Dissipation: | 1.7 W |
| Package / Case: | SOIC-8 |
| Configuration: | Dual Dual Drain |
| Unit Weight: | 0.002610 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 4.3 ns |
| Manufacturer: | Diodes Incorporated |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 20.1 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Transistor Type: | N-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 35 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
| Vgs - Gate-Source Voltage: | 25 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 4.1 ns |
| Forward Transconductance - Min: | 8.3 S |
| Series: | DMN3018 |
| Factory Pack Quantity: | 2500 |
| Brand: | Diodes Incorporated |
| RoHS: | Details |
| Id - Continuous Drain Current: | 9.7 A |
| Rise Time: | 4.4 ns |
| Maximum Operating Temperature: | + 150 C |
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