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| 产品描述：
Dual N-Channel 20 V 990 mOhm Enhancement Mode Mosfet - SOT-963
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| 标准包装：1 | ||
| 数据手册： |
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| Package / Case | SOT-963 |
|---|---|
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 450mA |
| Part Status | Active |
| Manufacturer | Diodes Incorporated |
| Family | Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 27.6pF @ 16V |
| ECCN | EAR99 |
| Rds On (Max) @ Id, Vgs | 990 mOhm @ 100mA, 4.5V |
| Power - Max | 350mW |
| Supplier Device Package | SOT-963 |
| Gate Charge (Qg) @ Vgs | 0.5nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | 2 N-Channel (Dual) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Cut Tape (CT) |
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