| DMN2016LHAB-7 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
DMN2016LHAB-7, 双 N沟道 MOSFET 晶体管, 7.5 A, Vds=20 V, 6针 U-DFN2030封装
|
||
| 标准包装：3000 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Package / Case | 6-UDFN Exposed Pad |
|---|---|
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A |
| Part Status | Active |
| Manufacturer | Diodes Incorporated |
| Family | Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 1550pF @ 10V |
| ECCN | ECL99 |
| Rds On (Max) @ Id, Vgs | 15.5 mOhm @ 4A, 4.5V |
| Power - Max | 1.2W |
| Supplier Device Package | U-DFN2030-6 |
| Gate Charge (Qg) @ Vgs | 16nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | 2 N-Channel (Dual) Common Drain |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：