| FDS6675BZ | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
P-Channel 30 V 21.8 mOhm 2.5 W Power Trench Mosfet - SOIC-8
|
||
| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Power - Max | 1W |
| Supplier Device Package | 8-SO |
| Gate Charge (Qg) @ Vgs | 62nC @ 10V |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Series | PowerTrench® |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 2470pF @ 15V |
| RoHS | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 13 mOhm @ 11A, 10V |
| PCN Assembly/Origin | Wafer 6/8 Inch Addition 16/Jun/2014 |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| PCN Design/Specification | Mold Compound 12/Dec/2007 |
| Online Catalog | P-Channel Logic Level Gate FETs |
| Family | FETs - Single |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Packaging | Tape & Reel (TR) |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：