| IPB120N04S402ATMA1 | ||
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| Product description : Single N-Channel 40 V 1.8 mOhm 134 nC OptiMOS™ Power Mosfet - PG-TO263-3 | ||
| SPQ：1000 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
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| Packaging: | Reel |
|---|---|
| Qg - Gate Charge: | 134 nC |
| Pd - Power Dissipation: | 158 W |
| Package / Case: | TO-263-3 |
| Configuration: | 1 N-Channel |
| Unit Weight: | 0.139332 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 27 ns |
| Series: | XPB120N04 |
| Factory Pack Quantity: | 1000 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 30 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 1.58 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 30 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | IPB120N04S4-02 IPB120N04S402XT SP000764726 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 120 A |
| Rise Time: | 16 ns |
| Maximum Operating Temperature: | + 175 C |
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