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| 产品描述：
Single N-Channel 200 V 55 mOhm 36 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
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| 标准包装：1 | ||
| 数据手册： |
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| FET Feature | Standard |
|---|---|
| Package / Case | 8-VQFN |
| Power - Max | 3.6W |
| Supplier Device Package | PQFN (5x6) Single Die |
| Gate Charge (Qg) @ Vgs | 54nC @ 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Vgs(th) (Max) @ Id | 5V @ 150µA |
| Packaging | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 55 mOhm @ 7.5A, 10V |
| PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| Series | HEXFET® |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 2290pF @ 100V |
| RoHS | Lead free / RoHS Compliant |
| 数据手册： |
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