IPP600N25N3GXKSA1
IPP600N25N3GXKSA1
  • 量产中
  • EAR99
产品描述:
Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
标准包装:50
数据手册: --
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Packaging: Tube
Qg - Gate Charge: 29 nC
Pd - Power Dissipation: 136 W
Tradename: OptiMOS
Vgs th - Gate-Source Threshold Voltage: 2 V
Vgs - Gate-Source Voltage: +/- 20 V
Mounting Style: Through Hole
Fall Time: 8 ns
Forward Transconductance - Min: 24 S
Series: XPP600N25
Factory Pack Quantity: 500
Brand: Infineon Technologies
Typical Turn-Off Delay Time: 22 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 250 V
Transistor Type: 1 N-Channel
ECCN EAR99
Rds On - Drain-Source Resistance: 51 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: TO-220-3
Configuration: 1 N-Channel
Unit Weight: 0.211644 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 10 ns
Manufacturer: Infineon
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: G IPP600N25N3 IPP600N25N3GXK SP000677832
RoHS:  Details
Id - Continuous Drain Current: 25 A
Rise Time: 10 ns
Maximum Operating Temperature: + 175 C
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stock500Update On
2025-07-15
Lead-Time--
SPQ/MOQ50/500
Location--
DateCode2334

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