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| 产品描述：
Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO262-3
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
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| FET Feature | Standard |
|---|---|
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Tube |
| Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 100A, 10V |
| Power - Max | 300W |
| Supplier Device Package | PG-TO262-3 |
| Gate Charge (Qg) @ Vgs | 93nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 5470pF @ 75V |
| ECCN | EAR99 |
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