IPD110N12N3GATMA1
  • 量产中
  • PG-TO252-3
  • EAR99
产品描述:
Single N-Channel 120 V 11 mOhm 49 nC OptiMOS™ Power Mosfet - DPAK
标准包装:1
数据手册: --
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FET Feature Standard
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss) 120V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Part Status Active
Manufacturer Infineon Technologies
Series OptiMOS™
Vgs(th) (Max) @ Id 3V @ 83µA (Typ)
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Digi-Reel®
Rds On (Max) @ Id, Vgs 11 mOhm @ 75A, 10V
Power - Max 136W
Supplier Device Package PG-TO252-3
Gate Charge (Qg) @ Vgs 65nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 4310pF @ 60V
ECCN EAR99
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