BSC105N10LSFGATMA1
BSC105N10LSFGATMA1
  • ACTIVE
  • PG-TDSON-8
  • EAR99
Product description : Single N-Channel 100 V 10.5 mOhm 40 nC OptiMOS™ Power Mosfet - TDSON-8
SPQ:1
Datasheet : --
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FET Feature Logic Level Gate
Package / Case 8-PowerTDFN
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 11.4A (Ta), 90A (Tc)
Part Status Active
Manufacturer Infineon Technologies
Series OptiMOS™
Vgs(th) (Max) @ Id 2.4V @ 110µA
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Digi-Reel®
Rds On (Max) @ Id, Vgs 10.5 mOhm @ 50A, 10V
Power - Max 156W
Supplier Device Package PG-TDSON-8
Gate Charge (Qg) @ Vgs 53nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 3900pF @ 50V
ECCN EAR99
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