| IPP086N10N3GXKSA1 | ||
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| 产品描述：
Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO220-3
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
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| Product Photos | TO-220-3 |
|---|---|
| Rds On (Max) @ Id, Vgs | 8.6 mOhm @ 73A, 10V |
| Power - Max | 125W |
| Supplier Device Package | TO-220-3 |
| Standard Package | 500 |
| Packaging | Tube |
| Datasheets | IPx08xN10N3 G |
| Online Catalog | N-Channel Standard FETs |
| Family | FETs - Single |
| Mounting Type | Through Hole |
| Other Names | IPP086N10N3 G IPP086N10N3 G-ND IPP086N10N3G SP000680840 |
| FET Feature | Standard |
| Package / Case | TO-220-3 |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Gate Charge (Qg) @ Vgs | 55nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Series | OptiMOS™ |
| Vgs(th) (Max) @ Id | 3.5V @ 75µA |
| Input Capacitance (Ciss) @ Vds | 3980pF @ 50V |
| ECCN | EAR99 |
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